Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas. 2000.
anodisation par plasma — plazminis anodinimas statusas T sritis radioelektronika atitikmenys: angl. plasma anodization vok. Plasmaanodierung, f rus. плазменное анодирование, n pranc. anodisation par plasma, f … Radioelektronikos terminų žodynas
Plasmaanodierung — plazminis anodinimas statusas T sritis radioelektronika atitikmenys: angl. plasma anodization vok. Plasmaanodierung, f rus. плазменное анодирование, n pranc. anodisation par plasma, f … Radioelektronikos terminų žodynas
plazminis anodinimas — statusas T sritis radioelektronika atitikmenys: angl. plasma anodization vok. Plasmaanodierung, f rus. плазменное анодирование, n pranc. anodisation par plasma, f … Radioelektronikos terminų žodynas
плазменное анодирование — plazminis anodinimas statusas T sritis radioelektronika atitikmenys: angl. plasma anodization vok. Plasmaanodierung, f rus. плазменное анодирование, n pranc. anodisation par plasma, f … Radioelektronikos terminų žodynas
Anodizing — Anodizing, or anodising, is an electrolytic passivation process used to increase the thickness of the natural oxide layer on the surface of metal parts. Anodizing increases corrosion resistance and wear resistance, and provides better adhesion… … Wikipedia
Porous silicon — (pSi) is a form of the chemical element silicon which has an introduced nanoporous holes in its microstructure, rendering a large surface to volume ratio in the order of 500m2/cm3. History Porous silicon was first discovered by accident in 1956… … Wikipedia
